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存储类芯片
存储类芯片
Product Model：LPDDR
Product Description：
◆ Structure:3L Coreless, Total thickness:130μm;
◆ MSAP process，BF Pitch/Width min /Space min :65/35/15μm;
◆ Warpage≤2mm(before reflow);
◆ Surface finish: AFOP(TOP:Ni/Au,BTM: OSP)
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