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Current Option：IC Substrate Series
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倒装芯片球栅格阵列FCBGA
倒装芯片球栅格阵列FCBGA
▪ 层数——8L 3+2+3▪ 材料——MCL-E-705G+ABF GL102▪ 板厚——0.76mm▪尺寸——50*50 mm▪ 内外层铜厚——17um▪最小线宽/线距——10/10 um▪最小孔径——50um▪ 表面处理——IT+SOP
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射频模组RF
射频模组RF
◆ Structure: 4L，1+2+1，Total thickness:180μm min;◆ Layer alignment: blind via ring width 25μm，Adjacentlayer shift≤25μm，Random layer shift≤40μm◆ MSAP process，trace width tolerance ±5μm ;◆ Surface finish: Thin ENEPIG ( Ni thickness 0.3~0.5μm)
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应用处理基带芯片AP/FCCSP
应用处理基带芯片AP/FCCSP
◆ Structure : 2L,Total thickness170 μm, core thickness 100μm;◆ MSAP process，L/S=20/20μm◆ 75μm laser dirlled “X” hole ，copper filled.Bonding finger Pitch: 95μm(50/40μm)BOL Pitch: 55μm(25/30μm)◆ Surface finish:Soft Ni/Au+OSP +Etch-back
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应用处理基带芯片AP/FCCSP
应用处理基带芯片AP/FCCSP
◆ Structure : 6L, 2+2+2,Total thickness 400 μm, core thickness 150μm;Inner layer: 75μm laser dirlled“X” hole ,copper filled. Outer layer:60μmlaser blind via.◆ Fine line: inner layerMSAP process,L/S=15/15 μm.◆ AUS SR1/thickness 15+/-7μm，SRO=105μm，SM shift tolerance≤15...
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存储类芯片LPDDR
存储类芯片LPDDR
◆ Structure:3L Coreless, Total thickness:130μm;◆ MSAP process，BF Pitch/Width min /Space min :65/35/15μm;◆ Warpage≤2mm(before reflow);◆ Surface finish: AFOP(TOP:Ni/Au,BTM: OSP)
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存储类芯片SSD
存储类芯片SSD
◆ Structure: 2L，Total thickness:100 μm min;Mechanical Drilling，Filled Via with SM;Laser Drilling，Filled Via with Copper, dimple≤5μm;◆ Tenting process，L/S≥35/35um;MSAP process,L/S≤25/25μm;◆ SM colour: Green or Black matte /thickness 20+/-7μm,SM Flatness≤7μm;◆ Surface fini...
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指纹模组Touch Fingerprint
指纹模组Touch Fingerprint
◆ Structure: 2L，Substrate thickness tolerance±15μm;Mechanical Drilling，Filled Via with SM or resin;◆ Tenting process，L/S≥35/35μm;◆ AUS320/25±7μm，SM Flatness≤7um;◆ Surface finish: Soft Ni/Au +Etch-back
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高性能计算GPU
高性能计算GPU
◆ Structure:12L,5+2+5◆ Core: BT / thickness 0.8mm◆ Bulid up : GX92/ thickness 25μm
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